DocumentCode
2442548
Title
An integrated 0.35µm CMOS technology inductor for wideBand LNA application
Author
Ben Amor, M. ; Loulou, M. ; Quintanel, S. ; Pasquet, D.
Author_Institution
Dept. of Electr. Eng., Nat. Eng. Sch. of Sfax, Sfax, Tunisia
fYear
2009
fDate
25-27 May 2009
Firstpage
313
Lastpage
317
Abstract
This paper presents the design of an integrated inductor with AMS CMOS 0.35 mum technology. This inductor is designed to ensure the wide band LNA circuit implementation on silicon. This inductor is designed with a coplanar transmission line. This line type achieves an inductance value of 0.38 nH on the whole operating frequency band from 2 to 6 GHz.
Keywords
CMOS analogue integrated circuits; coplanar transmission lines; elemental semiconductors; field effect MIMIC; microwave amplifiers; millimetre wave amplifiers; silicon; wideband amplifiers; AMS CMOS technology; Si; circuit implementation; coplanar transmission line; frequency 2 GHz to 6 GHz; integrated inductor; silicon; size 0.35 mum; wideband LNA; CMOS technology; Coplanar transmission lines; Coplanar waveguides; Distributed parameter circuits; Frequency; Inductors; Integrated circuit technology; Microstrip; Substrates; Wideband; CMOS technology; Integrated inductance; transmission line; wide band LNA;
fLanguage
English
Publisher
ieee
Conference_Titel
Telecommunications, 2009. ICT '09. International Conference on
Conference_Location
Marrakech
Print_ISBN
978-1-4244-2936-3
Electronic_ISBN
978-1-4244-2937-0
Type
conf
DOI
10.1109/ICTEL.2009.5158665
Filename
5158665
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