A monolithic high modulation efficiency CMOS laser diode / modulator driver

Author

Liang, Bangli ; Chen, Dianyong ; Wang, Bo ; Situ, Guohui ; Kwasniewski, Tad ; Wang, Zhigong

Author_Institution

Dept. of Electron., Carleton Univ., Ottawa, ON, Canada

fYear

2009

fDate

25-27 May 2009

Firstpage

361

Lastpage

363

Abstract

A high modulation efficiency laser diode/modulator driver (LDD/MD) is designed for low-cost optical access networks using shunt peaking active inductors and direct-coupled topology to boost the bandwidth, to improve modulation efficiency, and to reduce the silicon area. It provides a maximum modulation current of 74 mA or a maximum modulation voltage of 3.9 V through an equivalent 50 Omega load. Fully-open optical eye diagrams were observed at bit rate up to 1.25-Gb/s when it used as a LDD or a MD. The maximum RMS jitter is 38 ps. The 0.4 mm² chip consumes only 470 mW in 5 V 0.6 mum standard CMOS.

Keywords

CMOS integrated circuits; driver circuits; elemental semiconductors; integrated optics; optical fibre communication; optical modulation; optical transmitters; semiconductor lasers; silicon; CMOS laser diode; direct-coupled topology; modulation current; modulator driver; monolithic high modulation efficiency; optical eye diagrams; silicon area; size 0.6 mum; voltage 5 V; Active inductors; Bandwidth; Diode lasers; Network topology; Optical design; Optical fiber networks; Optical modulation; Shunt (electrical); Silicon; Voltage; CMOS; High Modulation Efficiency; Laser Diode / Modulator drive; Monolithic;

fLanguage

English

Publisher

ieee

Conference_Titel

Telecommunications, 2009. ICT '09. International Conference on

Conference_Location

Marrakech

Print_ISBN

978-1-4244-2936-3

Electronic_ISBN

978-1-4244-2937-0

Type

conf

DOI

10.1109/ICTEL.2009.5158674

Filename

5158674