مرکز منطقه ای اطلاع رساني علوم و فناوري - Two Dimensional Photoacoustic Mapping of Ion-Implanted and Laser Annealed Semiconductors

DocumentCode :

2442735

Title :

Two Dimensional Photoacoustic Mapping of Ion-Implanted and Laser Annealed Semiconductors

Author :

McFarlane, R.A. ; Hess, L.D. ; Olson, G.L.

fYear :

1980

fDate :

1980

Firstpage :

628

Lastpage :

632

Keywords :

Absorption; Amorphous materials; Annealing; Gallium arsenide; Implants; Laser modes; Mirrors; Particle beam optics; Semiconductor lasers; Silicon;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

1980 Ultrasonics Symposium

Type :

conf

DOI :

10.1109/ULTSYM.1980.197474

Filename :

1534414

Link To Document :