• DocumentCode
    2442735
  • Title

    Two Dimensional Photoacoustic Mapping of Ion-Implanted and Laser Annealed Semiconductors

  • Author

    McFarlane, R.A. ; Hess, L.D. ; Olson, G.L.

  • fYear
    1980
  • fDate
    1980
  • Firstpage
    628
  • Lastpage
    632
  • Keywords
    Absorption; Amorphous materials; Annealing; Gallium arsenide; Implants; Laser modes; Mirrors; Particle beam optics; Semiconductor lasers; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    1980 Ultrasonics Symposium
  • Type

    conf

  • DOI
    10.1109/ULTSYM.1980.197474
  • Filename
    1534414