DocumentCode :
2442784
Title :
Integrating ´atomistic´, intrinsic parameter fluctuations into compact model circuit analysis
Author :
Cheng, B.J. ; Roy, S. ; Roy, O. ; Asenov, A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fYear :
2003
fDate :
16-18 Sept. 2003
Firstpage :
437
Lastpage :
440
Abstract :
MOSFET parameter fluctuations, resulting from the ´atomistic´ granular nature of matter, are predicted to be a critical roadblock to the scaling of devices in future electronic systems. A methodology is presented which allows compact model based circuit analysis tools to exploit the results of ´atomistic´ device simulation, allowing investigation of the effects of such fluctuations on circuits and systems. The methodology is applied to a CMOS inverter, ring oscillator, and analogue NMOS current mirror as simple initial examples of its efficacy.
Keywords :
CMOS integrated circuits; MOSFET; current mirrors; fluctuations; integrated circuit modelling; logic gates; oscillators; semiconductor device models; CMOS inverter; MOSFET parameter fluctuations; analogue NMOS current mirror; atomistic intrinsic parameter fluctuations; compact model circuit analysis; device scaling; matter atomistic granular nature; ring oscillator; Analytical models; Circuit analysis; Circuit simulation; Circuits and systems; Fluctuations; Inverters; MOS devices; MOSFET circuits; Ring oscillators; Semiconductor device modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
Type :
conf
DOI :
10.1109/ESSDERC.2003.1256907
Filename :
1256907
Link To Document :
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