DocumentCode
2442823
Title
Subthreshold region conduction and 1/f noise empirical models in N-MOSFETs
Author
Pichon, L. ; Routoure, J.M. ; Carin, R. ; Mekwama, L. Nze
Author_Institution
GREYC, ENSICAEN, Caen Univ., France
fYear
2003
fDate
16-18 Sept. 2003
Firstpage
445
Lastpage
448
Abstract
Temperature dependence measurements of the subthreshold current are performed in MOSFETs and show that this current is well described by the Meyer-Neldel effect. A low-frequency noise model, based on carrier fluctuations including this effect, is established to describe the noise in the subthreshold region. This model leads to the qualification of several technologies and particularly to the extraction of the oxide state density.
Keywords
1/f noise; MOSFET; semiconductor device measurement; semiconductor device models; semiconductor device noise; 1/f noise empirical model; Meyer-Neldel effect; N-MOSFET; carrier fluctuations; low-frequency noise model; oxide state density extraction; subthreshold current; temperature dependent subthreshold region conduction; Current measurement; Fluctuations; Lead compounds; Low-frequency noise; MOSFET circuits; Performance evaluation; Qualifications; Subthreshold current; Temperature dependence; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location
Estoril, Portugal
Print_ISBN
0-7803-7999-3
Type
conf
DOI
10.1109/ESSDERC.2003.1256909
Filename
1256909
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