A multi-stack insulator silicon-organic memory device with gold nanoparticles

Author

Kollíopoulou, S. ; Tsoukalas, D. ; Dimitrakis, P.. ; Normand, P. ; Zhang, Hao-Li ; Cant, N. ; Evans, S.D. ; Paul, S. ; Pearson, C. ; Molloy, A. ; Petty, M.C.

Author_Institution

Inst. of Microelectron., NCSR Demokritos, Aghia Paraskevi, Greece

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

477

Lastpage

480

Abstract

We demonstrate a memory device, using gold nanoparticles as charge storage elements deposited at room temperature by chemical processing. The nanoparticles are deposited over a thin thermal silicon dioxide layer that insulates them from the device silicon channel. An organic insulator deposited by the Langmuir-Blodget technique at room temperature separates the aluminium gate electrode from the nanoparticles. The device exhibits significant threshold voltage shifts after application of low voltage pulses (\n\n\t\t

Keywords

MISFET; aluminium; elemental semiconductors; gold; nanoelectronics; nanoparticles; random-access storage; semiconductor storage; silicon; silicon compounds; -7 V; 7 V; Al-Au-Si-SiO/sub 2/; Langmuir-Blodget technique; MISFET; aluminium gate electrode; charge storage elements; gold nanoparticles; multistack insulator silicon-organic memory device; nonvolatile retention time characteristics; silicon channel; thermal silicon dioxide insulating layer; threshold voltage shifts; Aluminum; Chemical elements; Chemical processes; Electrodes; Gold; Insulation; Nanoparticles; Silicon compounds; Temperature; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7999-3

Type

conf

DOI

10.1109/ESSDERC.2003.1256917

Filename

1256917