DocumentCode
2442992
Title
Borderless nitride requirements for embedded non-volatile deep sub-micron technologies
Author
Cacciato, A. ; Scarpa, A. ; Diekema, M. ; de Ven, G.V. ; van Marwijk, L. ; Dormans, Do
Author_Institution
Philips Semicond., Nijmegen, Netherlands
fYear
2003
fDate
16-18 Sept. 2003
Firstpage
485
Lastpage
488
Abstract
In this paper, we evaluate the extra requirements that borderless materials, widely used in standard logic technologies as stop layers during oxide etch, have to fulfil for high-voltage non-volatile applications. We also evaluate the effect of nitride conduction on charging damage during contact etch. In particular, it is demonstrated that nitride layers can act as antennas, thus causing charging damage.
Keywords
CMOS memory circuits; etching; random-access storage; silicon compounds; CMOS logic technologies; SiN; SiON; borderless materials; borderless nitride requirements; contact etch charging damage; high-voltage nonvolatile memory; nitride conduction; nitride layer antennas; oxide etch stop layers; Conducting materials; Contacts; Etching; Nonvolatile memory; Plasma applications; Plasma materials processing; Plasma temperature; Plasma transport processes; Silicon compounds; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location
Estoril, Portugal
Print_ISBN
0-7803-7999-3
Type
conf
DOI
10.1109/ESSDERC.2003.1256919
Filename
1256919
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