DocumentCode
2443154
Title
Measurement of electro-refraction in GaAs/AlGaAs multiple quantum well waveguide structures
Author
Ur-Rahman, Hamood ; Langer, D.W.
Author_Institution
Coll. of Aeronaut. Eng., Nat. Univ. of Sci. & Technol., PAF Academy Risalpur, Pakistan
fYear
1996
fDate
17-21 June 1996
Firstpage
247
Lastpage
248
Abstract
Presents a direct approach to precisely measure changes in refractive index (/spl Delta/n) of GaAs/AlGaAs Multiple Quantum Well (MQW) wave guide structures as a function of applied electric field across the MQW layers. The results of /spl Delta/n(E) are useful for developing electro-optic quantum well devices.
Keywords
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; optical planar waveguides; refractive index; semiconductor quantum wells; GaAs-AlGaAs; III-V semiconductors; applied electric field; electro-optic quantum well devices; electro-refraction measurement; multiple quantum well waveguide structures; refractive index; Absorption; Electric variables measurement; Gallium arsenide; Molecular beam epitaxial growth; Pump lasers; Quantum well devices; Refractive index; Shape measurement; Voltage; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements Digest, 1996 Conference on
Conference_Location
Braunschweig, Germany
Print_ISBN
0-7803-3376-4
Type
conf
DOI
10.1109/CPEM.1996.547054
Filename
547054
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