DocumentCode :
2443154
Title :
Measurement of electro-refraction in GaAs/AlGaAs multiple quantum well waveguide structures
Author :
Ur-Rahman, Hamood ; Langer, D.W.
Author_Institution :
Coll. of Aeronaut. Eng., Nat. Univ. of Sci. & Technol., PAF Academy Risalpur, Pakistan
fYear :
1996
fDate :
17-21 June 1996
Firstpage :
247
Lastpage :
248
Abstract :
Presents a direct approach to precisely measure changes in refractive index (/spl Delta/n) of GaAs/AlGaAs Multiple Quantum Well (MQW) wave guide structures as a function of applied electric field across the MQW layers. The results of /spl Delta/n(E) are useful for developing electro-optic quantum well devices.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; optical planar waveguides; refractive index; semiconductor quantum wells; GaAs-AlGaAs; III-V semiconductors; applied electric field; electro-optic quantum well devices; electro-refraction measurement; multiple quantum well waveguide structures; refractive index; Absorption; Electric variables measurement; Gallium arsenide; Molecular beam epitaxial growth; Pump lasers; Quantum well devices; Refractive index; Shape measurement; Voltage; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements Digest, 1996 Conference on
Conference_Location :
Braunschweig, Germany
Print_ISBN :
0-7803-3376-4
Type :
conf
DOI :
10.1109/CPEM.1996.547054
Filename :
547054
Link To Document :
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