Title :
Analysis of electrical characteristics of La/sub 2/O/sub 3/ thin films annealed in vacuum and others
Author :
Kim, Yongshik ; Kuriyama, Atsushi ; Ueda, Isao ; Ohmi, Shun-ichiro ; Tsutsui, Kazuo ; Iwai, Hisato
Author_Institution :
Interdisciplinary Graduate Sch. Sci. & Eng., Tokyo Inst. of Technol., Japan
Abstract :
Lanthanum oxide (La/sub 2/O/sub 3/) was deposited by MBE on n-Si(100), and annealed at 400/spl deg/C in vacuum in-situ for 90 min. Ag or Al metal electrodes were attached. From the electric field and temperature dependence of the current of the gate oxide, it has been shown that the main conduction mechanism is the P-F (Poole-Frenkel) conduction and contributed by the SCLC (space-charge-limited current), depending on the bias conditions. The dielectric constant obtained from the P-F conduction equation was 10 and was consistent with the C-V result. We also realized that SCLC plays a role in the low gate voltage region of the P-F conduction, which ranges in an absolute voltage less than 0.34 V.
Keywords :
Poole-Frenkel effect; aluminium; annealing; dielectric thin films; lanthanum compounds; leakage currents; molecular beam epitaxial growth; silver; space-charge-limited conduction; 0.34 V; 400 degC; 90 min; Ag-La/sub 2/O/sub 3/-Si; Al-La/sub 2/O/sub 3/-Si; MBE deposition; Poole-Frenkel conduction; SCLC; dielectric constant; dielectric thin films; gate dielectrics; gate oxide electric field dependence; gate oxide temperature dependence; leakage current conduction mechanism; metal electrodes; n-Si(100); space-charge-limited current; vacuum annealing; Annealing; Artificial intelligence; Capacitance-voltage characteristics; Dielectric substrates; Electric variables; Electrodes; Molecular beam epitaxial growth; Sputtering; Transistors; Vacuum technology;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256940
