Title :
Silicon carbide accumulation-mode laterally diffused MOSFET
Author :
Ayalew, Tesfaye ; Park, Jong-Mun ; Gehring, Andreas ; Grasser, Tibor ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., TU Vienna, Austria
Abstract :
We present a new accumulation-mode structure for silicon carbide laterally diffused MOSFETs. Key parameters that alter the device performance have been optimized using the device simulator MINIMOS-NT. The relationship between blocking and driving capability of the structure has been analyzed. Excellent I-V characteristics with significant improvement in the reduction of the gate bias voltage has been achieved. A blocking voltage of 1460 V with a small leakage current, a considerably lower specific on resistance of 93 m/spl Omega//spl middot/cm/sup 2/ and a fairly large advantage in electrical performance and device reliability were achieved.
Keywords :
leakage currents; power MOSFET; semiconductor device models; silicon compounds; wide band gap semiconductors; 1460 V; I-V characteristics; SiC; accumulation-mode laterally diffused MOSFET; blocking voltage; gate bias voltage reduction; leakage current; specific on resistance; structure blocking capability; structure driving capability; Analytical models; Degradation; Doping; Electron mobility; Insulated gate bipolar transistors; MOSFET circuits; Optical scattering; Semiconductor materials; Silicon carbide; Voltage;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256943
