18 GHz high gain, high efficiency power operation of AlGaAs/GaAs HBT

Author

Wang, N.L. ; Sheng, N.H. ; Ho, W.J. ; Chang, M.F. ; Sullivan, G.J. ; Higgins, J.A. ; Asbeck, P.M.

Author_Institution

Rockwell Int., Thousand Oaks, CA, USA

fYear

1990

fDate

8-10 May 1990

Firstpage

997

Abstract

Outstanding power performance has been achieved from an AlGaAs/GaAs heterostructure bipolar transistor (HBT) at 18 GHz. A common emitter HBT has achieved 48.5% added efficiency, 6.2-dB associated gain, and 0.17-W output power. Common base operation of the HBT exhibits higher gain at 18 GHz: 0.358 W (3.58 W/mm) was achieved with 11.4-dB gain and 43% added efficiency; at a reduced power level of 0.174 W (1.74 W/mm), 15.3-dB associated power gain was achieved with 40% efficiency. This performance compares favorably with the results reported for MESFETs, HEMTs (high-electron-mobility transistors), and PBTs (permeable-base transistors).<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; power transistors; solid-state microwave devices; 0.17 W; 0.358 W; 11.4 dB; 15.3 dB; 18 GHz; 40 percent; 43 percent; 48.5 percent; 6.2 dB; AlGaAs-GaAs heterostructure bipolar transistor; HBT; common base operation; common emitter HBT; gain; high efficiency power operation; high gain; output power; power added efficiency; Contact resistance; Fingers; Frequency; Gallium arsenide; Grounding; HEMTs; Heterojunction bipolar transistors; MODFETs; Optical amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1990., IEEE MTT-S International

Conference_Location

Dallas, TX

Type

conf

DOI

10.1109/MWSYM.1990.99747

Filename

99747