Title :
Quantization test of a Hall device by ac measurements of the longitudinal resistance
Author :
Cabiati, F. ; Capra, P.P. ; Reedtz, G.M. ; Sosso, A. ; Rinaudo, G.
Author_Institution :
Istituto Elettrotecnico Nazionale Galileo Ferraris, Torino, Italy
Abstract :
The influence of frequency on the quantization of a Hall device has been studied through ac measurements of the longitudinal resistance R/sub X/. The measurement technique is described and preliminary results are reported, which are in agreement with the model adopted to represent the system.
Keywords :
Hall effect devices; III-V semiconductors; electric resistance measurement; gallium arsenide; measurement standards; quantum Hall effect; 2D electron gas; GaAs-AlGaAs; GaAs-AlGaAs heterostructure; Hall device; ac measurements; compensation; longitudinal resistance; measurement standards; quantization test; quantum Hall effect; Capacitance; Coaxial components; Electric resistance; Electrical resistance measurement; Electrodes; Frequency; Impedance measurement; Measurement techniques; Quantization; Testing;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 1996 Conference on
Conference_Location :
Braunschweig, Germany
Print_ISBN :
0-7803-3376-4
DOI :
10.1109/CPEM.1996.547059
