Title :
The study of a drift-diffusion model
Author :
Abouchabaka, J. ; Aboulaïch, R. ; Nachaoui, A. ; Souissi, A.
Abstract :
This work proposes a theoretical and a numerical study of a decoupled algorithm in order to approximate a free boundary separating the depletion region and the charge neutrality region in a field effect transistor of MESFET type. In order to do that, a simplified drift-diffusion model is used. In this work we prove the convergence of the previous algorithm and we present some numerical results.
Keywords :
Schottky gate field effect transistors; convergence of numerical methods; semiconductor device models; MESFET; charge neutrality region; convergence; decoupled algorithm; depletion region; drift-diffusion model; free boundary; numerical results; Boundary conditions; Charge carrier processes; Convergence of numerical methods; Current density; Electron mobility; FETs; Gold; MESFETs; Poisson equations; Semiconductor devices;
Conference_Titel :
Microelectronics, 2001. ICM 2001 Proceedings. The 13th International Conference on
Print_ISBN :
0-7803-7522-X
DOI :
10.1109/ICM.2001.997485
