Title :
New method for determination of drain saturation voltage in submicrometer MOSFETs between liquid helium to room temperature
Author :
Amhouche, Y. ; El Abbassi, A. ; Raïs, K. ; Rmaily, R.
Author_Institution :
Lab. de Caracterisation des Composants a Semi-Conducteurs (LCCS), Faculte des Sci. Chouaib Doukkali, El Jadida, Morocco
Abstract :
A new method for drain saturation voltage extraction in submicron MOSFETs is presented. It is based on measurements of the partial derivative of the impact ionization rate. The method has been tested using different channel length MOSFET devices and compared with other methods.
Keywords :
MOSFET; impact ionisation; semiconductor device models; channel length; drain saturation voltage; impact ionization rate; modelling; partial derivative; submicrometer MOSFETs; Doping; Electrons; Helium; Impact ionization; MOSFET circuits; Process control; Rain; Temperature sensors; Testing; Voltage;
Conference_Titel :
Microelectronics, 2001. ICM 2001 Proceedings. The 13th International Conference on
Print_ISBN :
0-7803-7522-X
DOI :
10.1109/ICM.2001.997487
