Title :
Electroluminescence analysis of neutron irradiation of JFETs
Author :
Ahaitouf, Ali ; Lahbabi, M. ; Fliyou, M. ; Abarkan, E. ; Hoffmann, Axel ; Charles, JP
Author_Institution :
Faculte des Sci. et Techniques, UFR L2SC, Fes, Morocco
Abstract :
Electroluminescence (EL) measurements are used as a sensitive technique for the study of fast neutron irradiation of silicon n-channel JFET overlaid by a passivation oxide layer. By theoretical simulations, it is demonstrated that neutron irradiation result in two effects: an increase of the refractive index of the passivation oxide and the introduction of deep level traps which reduce the emitted intensities by reduction of the mobility of hot carriers.
Keywords :
carrier mobility; deep levels; electroluminescence; elemental semiconductors; hot carriers; junction gate field effect transistors; neutron effects; passivation; refractive index; silicon; Si; Si n-channel JFET; deep levels traps; electroluminescence analysis; fast neutron irradiation; hot carrier mobility reduction; p-n junction irradiation; passivation oxide layer; passivation oxide refractive index increase; theoretical simulations; Electroluminescence; Electron traps; Hot carriers; Interference; JFETs; Neutrons; Passivation; Refractive index; Silicon; Stimulated emission;
Conference_Titel :
Microelectronics, 2001. ICM 2001 Proceedings. The 13th International Conference on
Print_ISBN :
0-7803-7522-X
DOI :
10.1109/ICM.2001.997490
