• DocumentCode
    2444768
  • Title

    Soft Error Sensitivities in 90 nm Bulk CMOS SRAMs

  • Author

    Lawrence, Reed K. ; Ross, Jason F. ; Haddad, Nadim F. ; Reed, Robert A. ; Albrecht, David R.

  • Author_Institution
    BAE Syst., Manassas, VA, USA
  • fYear
    2009
  • fDate
    20-24 July 2009
  • Firstpage
    123
  • Lastpage
    126
  • Abstract
    Enhanced single event upset (SEU) sensitivity to low energy protons, as much as 5-6 orders of ten, has been observed in 90 nm epitaxial-bulk complementary metal oxide semiconductor (CMOS) static random access memories (SRAM). Enhancements to process and cell design are discussed.
  • Keywords
    CMOS integrated circuits; SRAM chips; integrated circuit testing; radiation hardening (electronics); bulk CMOS SRAMs; cell design; enhanced single event upset sensitivity; epitaxial-bulk complementary metal oxide semiconductor; low energy protons; size 90 nm; soft error sensitivity; static random access memories; CMOS technology; Capacitors; Process design; Protons; Random access memory; Resistors; Single event upset; Space technology; Testing; Vehicle dynamics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2009 IEEE
  • Conference_Location
    Quebec City, QC
  • Print_ISBN
    978-1-4244-5092-3
  • Type

    conf

  • DOI
    10.1109/REDW.2009.5336302
  • Filename
    5336302
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2444768