Title :
Synergistic Effects of Total Ionizing Dose on SEU Sensitive SRAMs
Author :
Koga, R. ; Yu, P. ; Crawford, K. ; George, J. ; Zakrzewski, M.
Author_Institution :
Aerosp. Corp., El Segundo, CA, USA
Abstract :
Synergistic effects of total ionizing dose and particle fluence on SEU sensitivity of static random access memories have been investigated. The memory imprint effect has been observed to yield varying results.
Keywords :
SRAM chips; radiation effects; SEU sensitive SRAMs; memory imprint effect; particle fluence; single event upset; static random access memories; synergistic effects; total ionizing dose; yield varying results; Aerospace testing; Degradation; Ionizing radiation; Logic; MOS devices; National electric code; Protons; Random access memory; SRAM chips; Single event upset;
Conference_Titel :
Radiation Effects Data Workshop, 2009 IEEE
Conference_Location :
Quebec City, QC
Print_ISBN :
978-1-4244-5092-3
DOI :
10.1109/REDW.2009.5336303
