DocumentCode
2444800
Title
Dynamic signal model in the surface channel charge coupled devices
Author
Bri, S. ; Zenkouar, L. ; Yebari, M.
Author_Institution
Electron. & Commun. Lab., Ecole Mohammadia d´´Ingenieurs, Rabat, Morocco
fYear
2001
fDate
29-31 Oct. 2001
Firstpage
145
Lastpage
148
Abstract
The CCDs are used widely in special applications for very large scale integration (VLSI). In this paper, we have studied transfer charges coupled devices (CCDs) between adjacent MOS capacities under the control of an externally applied voltage. In order to show the role of the potential space inter-electrodes, a numerical program was developed and adapted to different CCD technologies.
Keywords
capacitance; charge-coupled device circuits; charge-coupled devices; integrated circuit modelling; semiconductor device models; VLSI; dynamic signal model; numerical program; potential space inter-electrodes; surface channel CCD; transfer charges coupled devices; very large scale integration; Charge coupled devices; Clocks; Communication system control; Dielectric constant; Flowcharts; Laboratories; Numerical simulation; Space technology; Very large scale integration; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2001. ICM 2001 Proceedings. The 13th International Conference on
Print_ISBN
0-7803-7522-X
Type
conf
DOI
10.1109/ICM.2001.997508
Filename
997508
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