Title :
Dynamic signal model in the surface channel charge coupled devices
Author :
Bri, S. ; Zenkouar, L. ; Yebari, M.
Author_Institution :
Electron. & Commun. Lab., Ecole Mohammadia d´´Ingenieurs, Rabat, Morocco
Abstract :
The CCDs are used widely in special applications for very large scale integration (VLSI). In this paper, we have studied transfer charges coupled devices (CCDs) between adjacent MOS capacities under the control of an externally applied voltage. In order to show the role of the potential space inter-electrodes, a numerical program was developed and adapted to different CCD technologies.
Keywords :
capacitance; charge-coupled device circuits; charge-coupled devices; integrated circuit modelling; semiconductor device models; VLSI; dynamic signal model; numerical program; potential space inter-electrodes; surface channel CCD; transfer charges coupled devices; very large scale integration; Charge coupled devices; Clocks; Communication system control; Dielectric constant; Flowcharts; Laboratories; Numerical simulation; Space technology; Very large scale integration; Voltage control;
Conference_Titel :
Microelectronics, 2001. ICM 2001 Proceedings. The 13th International Conference on
Print_ISBN :
0-7803-7522-X
DOI :
10.1109/ICM.2001.997508
