Observations from the Analysis of On-Orbit Data from DRAMs Used in Space Systems

Author

Schaefer, Justin J. ; Owen, Russ S. ; Rutt, Paul M. ; Miller, Chris

Author_Institution

SEAKR Eng., Inc., Centennial, CO, USA

fYear

2009

fDate

20-24 July 2009

Firstpage

106

Lastpage

113

Abstract

Radiation effects such as TID and SEE including single and multiple bit upsets and SEFI modes need to be characterized and considered for space systems using COTS DRAM for natural space radiation environments. We present on-orbit data collected from commercial DRAM devices used in SSRs designed and built by SEAKR Engineering. Upset rates for on-orbit COTS DRAM memories are presented and compared to rates predicted using CREME96 [1] for three generations of commercial DRAM technology including 64 Mb EDO DRAM, 128 Mb SDRAM, and 256 Mb SDRAM.

Keywords

DRAM chips; SRAM chips; aerospace instrumentation; radiation hardening (electronics); COTS DRAM; CREME96; EDO DRAM; SDRAM; SEE; SEFI modes; TID; commercial of-the-shelf memory components; multiple bit upsets; natural space radiation environments; on-orbit data; radiation effects; single bit upsets; space systems; storage capacity 128 Mbit; storage capacity 256 Mbit; storage capacity 64 Mbit; Aerospace testing; Data analysis; Data engineering; Earth; Protons; Radiation effects; Random access memory; Single event upset; Space technology; Telephony;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 2009 IEEE

Conference_Location

Quebec City, QC

Print_ISBN

978-1-4244-5092-3

Type

conf

DOI

10.1109/REDW.2009.5336304

Filename

5336304