Title :
TID and SEE Response of Advanced Samsung and Micron 4G NAND Flash Memories for the NASA MMS Mission
Author :
Oldham, T.R. ; Friendlich, M.R. ; Sanders, A.B. ; Seidleck, C.M. ; Kim, H.S. ; Berg, M.D. ; LaBel, K.A.
Author_Institution :
Perot Syst. Gov. Services, Inc., Greenbelt, MD, USA
Abstract :
SEE and TID results are presented for two advanced commercial flash memories, Samsung and Micron 4 Gb. Both have very good TID response, and very good SEU bit error rates, but the Samsung parts have lower SEFI rates and lower rates of destructive failures.
Keywords :
aerospace instrumentation; failure analysis; flash memories; integrated circuit testing; logic gates; radiation hardening (electronics); Micron 4G NAND flash memories; NASA MMS mission; SEE response; SEFI rates; SEU bit error rates; TID response; advanced Samsung flash memories; destructive failures; single event effects; storage capacity 4 Gbit; total ionizing dose; CMOS technology; Circuit testing; Error correction; Frequency; NASA; Performance evaluation; Plastic packaging; Production facilities; Space technology; Voltage;
Conference_Titel :
Radiation Effects Data Workshop, 2009 IEEE
Conference_Location :
Quebec City, QC
Print_ISBN :
978-1-4244-5092-3
DOI :
10.1109/REDW.2009.5336305
