DocumentCode :
2444864
Title :
Heavy-Ion and Total Ionizing Dose (TID) Performance of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)
Author :
Katti, Romney R. ; Lintz, John ; Sundstrom, Lance ; Marques, Tony ; Scoppettuolo, Steve ; Martin, Douglas
Author_Institution :
Honeywell Int., Inc., Plymouth, MN, USA
fYear :
2009
fDate :
20-24 July 2009
Firstpage :
103
Lastpage :
105
Abstract :
An MRAM is a nonvolatile memory that has been demonstrated and supports heavy ion immunity to an LET of approximately 69 MeV-cm2/mg for fluences to 108 ions/cm2; and TED hardness in excess of 1 Mrad.
Keywords :
MRAM devices; radiation effects; LET immunity; MRAM; heavy-ion dose; linear energy transfer; magnetoresistive random access memory; nonvolatile memory; storage capacity 1 Mbit; total ionizing dose; Insulation; Laboratories; Magnetic tunneling; Magnetization; Magnetoresistance; Nonvolatile memory; Packaging; Random access memory; Silicon; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop, 2009 IEEE
Conference_Location :
Quebec City, QC
Print_ISBN :
978-1-4244-5092-3
Type :
conf
DOI :
10.1109/REDW.2009.5336307
Filename :
5336307
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2444864
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