Title :
Sensitivity to LET and Test Conditions for SEE Testing of Power MOSFETs
Author :
Scheick, Leif ; Selva, Luis
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
The results of recent single event gate rupture and single event burnout testing on power MOSFETS are presented. The recent test data show a considerable drop in failure voltage in comparison to manufacturer data for device ratings over 130 V. The effect of range is considered to account for this difference. The methods and practices for testing and data analyses that need to be used for adequate SEE testing of power MOSFETs are also presented.
Keywords :
fracture; power MOSFET; radiation hardening (electronics); semiconductor device testing; space vehicle electronics; LET sensitivity; SEE testing; data analysis; failure voltage; power MOSFET; single event burnout testing; single event gate rupture testing; space missions; Circuit testing; Current measurement; Electric variables measurement; Epitaxial layers; Laboratories; Leakage current; MOSFETs; Manufacturing; Space technology; Voltage;
Conference_Titel :
Radiation Effects Data Workshop, 2009 IEEE
Conference_Location :
Quebec City, QC
Print_ISBN :
978-1-4244-5092-3
DOI :
10.1109/REDW.2009.5336308
