Title :
Low Dose Rate Test Results for National Semiconductor´s ELDRS-Free LM136-2.5 Bipolar Reference
Author :
Kruckmeyer, Kirby ; McGee, Larry ; Brown, Bill ; Miller, Linda
Author_Institution :
Nat. Semicond., Santa Clara, CA, USA
Abstract :
Low dose rate (LDR) and high dose rate (HDR) total ionizing dose (TED) test results, drift calculations and an enhanced low dose rate sensitivity (ELDRS) characterization are presented for National Semiconductor\´s "ELDRS-free" bipolar reference, LM136-2.5 and compared to data from older versions of the product.
Keywords :
Zener diodes; avalanche diodes; bipolar integrated circuits; gamma-ray effects; radiation hardening (electronics); HDR TED test; LDR total ionizing dose test; National Semiconductor ELDRS-free LM136-2.5 bipolar reference; bipolar shunt reference; drift calculations; enhanced low dose rate sensitivity; gamma ray irradiation; high dose rate test; low dose rate test; radiation hardening; shunt regulator diode; voltage reference; Helium; Ionizing radiation; Manufacturing processes; Qualifications; Regulators; Semiconductor device testing; Semiconductor diodes; Statistical analysis; Temperature; Time factors;
Conference_Titel :
Radiation Effects Data Workshop, 2009 IEEE
Conference_Location :
Quebec City, QC
Print_ISBN :
978-1-4244-5092-3
DOI :
10.1109/REDW.2009.5336314
