Title :
Electrical detection of very low content of transferrin in view of iron metabolism characterization
Author :
Girard, A. ; De Sagazan, O. ; Le Bihan, F. ; Mohammed-Brahim, T. ; Geneste, F. ; Brissot, P. ; Guguen-Guillouzo, C.
Author_Institution :
Microelectron. Group, Univ. RENNES I, Rennes
fDate :
Nov. 30 2008-Dec. 3 2008
Abstract :
Suspended-gate FETs, namely SGFET, with sub-micron gap are used to detect electrically transferrin concentration directly without any labelling. The fabrication of the device and the process to functionnalize it, so that it will be able to detect transferrin, are given. The feasibility of the detection is demonstrated and a range of detectable concentrations is determined. Concentration, as low as 100 ng/mL, is measured. The maximum concentration in the linear regime, 5 mug/mL, is under the range of the standard clinical techniques. The fabrication of the device is compatible with usual microelectronic tools. Its functionalization can be easily implemented in any chemical environment. Present results open the way to simultaneous detection of many proteins giving in real time indication on complicated biologic functions as liver metabolism.
Keywords :
biomedical electronics; field effect transistors; proteins; electrical detection; iron metabolism characterization; liver metabolism; microelectronic tools; protein detection; suspended-gate FET; transferrin detection; Biochemistry; Blood; Bridges; FETs; Fabrication; Iron; Labeling; Microelectronics; Plasma temperature; Proteins; diagnosis; electronic detection; protein; sensitivity; suspended-gate FET;
Conference_Titel :
Sensing Technology, 2008. ICST 2008. 3rd International Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-2176-3
Electronic_ISBN :
978-1-4244-2177-0
DOI :
10.1109/ICSENST.2008.4757183