Title :
CMOS x-ray image sensor with pixel level A/D conversion
Author :
Rocha, J.G. ; Ramos, N.F. ; Wolffenbuttel, R.F. ; Correia, J.H.
Author_Institution :
Dept. of Ind. Electron., Minho Univ., Guimaraes, Portugal
Abstract :
This paper describes a pixel array for x-rays imaging consisting in 400 /spl mu/m /spl times/ 400 /spl mu/m photodiodes fabricated in CMOS technology, with an A/D converter for each one. Above the photodiodes, an array of scintillating CsI:Tl crystals are placed. So, the x-ray energy is first converted to visible light by the scintillating crystal which is then detected by the photodiodes. The photocurrent produced by each photodiode is finally converted to a digital form by a sigma-delta analog to digital converter. The sigma-delta a/d converter uses 18 minimum-size MOSFETs and one capacitor. 8 to 10 bits of resolution can be achieved.
Keywords :
CMOS image sensors; MOSFET circuits; X-ray imaging; analogue-digital conversion; photodiodes; sigma-delta modulation; CMOS technology; CMOS x-ray image sensor; CsI:Tl; MOSFET; photocurrent; photodiodes array; pixel array; pixel level A-D conversion; scintillating crystal; sigma-delta analog-to-digital converter; visible light; x-ray energy; x-rays imaging; CMOS image sensors; CMOS technology; Crystals; Delta-sigma modulation; Image converters; Image sensors; Photodiodes; Pixel; X-ray detection; X-ray imaging;
Conference_Titel :
Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7995-0
DOI :
10.1109/ESSCIRC.2003.1257087