DocumentCode :
2446394
Title :
Linearization of monolithic LNAs using low-frequency low-impedance input termination
Author :
Aparin, Vladimir ; Larson, Lawrence E.
Author_Institution :
Qualcomm Inc., San Diego, CA, USA
fYear :
2003
fDate :
16-18 Sept. 2003
Firstpage :
137
Lastpage :
140
Abstract :
This work investigates the linearization technique based on terminating the LNA input with low impedance at the low frequencies of the second-order mixing terms. This technique is analyzed using the Volterra series and is shown to be very effective in linearizing BJTs but not FETs if the latter are biased in the strong inversion region. Several methods to generate the low-frequency low-impedance input termination are reviewed. A SiGe BiCMOS cellular band CDMA LNA using this linearization technique is described. The LNA achieves +11.7dBm IIP3, 15.7dB gain and 1.4dB NF with a current consumption of only 3.9mA@3V.
Keywords :
BiCMOS integrated circuits; Volterra series; amplifiers; code division multiple access; linearisation techniques; monolithic integrated circuits; 1.4 dB; 15.7 dB; 3 V; 3.9 mA; BJT linearizing; BiCMOS cellular band; CDMA; SiGe; Volterra series; linearization technique; low impedance termination; low-frequency input termination; low-impedance input termination; monolithic LNA; second-order mixing terms; strong inversion region; Circuits; Degradation; FETs; Frequency; Germanium silicon alloys; Jamming; Linearization techniques; Multiaccess communication; Noise measurement; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7995-0
Type :
conf
DOI :
10.1109/ESSCIRC.2003.1257091
Filename :
1257091
Link To Document :
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