A novel method for the modelling and the design of MESFETs and of any kind of heterojunction FET

Author

Godts, P. ; Depreeuw, D. ; Constant, E. ; Zimmermann, J.

Author_Institution

Univ. of Sci. & Tech. of Lille Flandres Artois, Villeneuve d´´Ascq, France

fYear

1988

fDate

7-9 Jun 1988

Firstpage

2061

Abstract

A novel method for modelling field effect transistors (FETs) is described. It is applied to the study of a number of devices, including FETs, MODFETs, SISFETs, DMTs and multiple HEMTs (high-electron-mobility transistors). This method includes the most important physical effects in these devices, but is very simple and easy to implement on a microcomputer. It is used for the control of technological device processes realized in the laboratory as well as for the design of more efficient structures

Keywords

CAD; Schottky gate field effect transistors; electronic engineering computing; field effect transistors; high electron mobility transistors; microcomputer applications; semiconductor device models; solid-state microwave devices; DMTs; FETs; MESFETs; MODFETs; SISFETs; design; heterojunction FET; high-electron-mobility transistors; microcomputer implementation; microwave transistors; modelling; multiple HEMTs; technological device processes; Doping; Electrons; FETs; HEMTs; Heterojunctions; Laboratories; MESFETs; MODFETs; Microcomputers; Physics computing;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1988., IEEE International Symposium on

Conference_Location

Espoo

Type

conf

DOI

10.1109/ISCAS.1988.15346

Filename

15346