24 Gb/s laser/modulator driver IC using 0.2/spl mu/m gate length PHEMTs

Author

Huang, Ting ; Wang, Zhigong ; Zhu, En ; Wang, Xiaoming ; Xiong, Mingzhen

Author_Institution

Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

277

Lastpage

280

Abstract

An integrated laser/modulator driver for high-speed optical fiber communication systems has been developed. The integrated circuit was fabricated in a 0.2/spl mu/m gate length AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs) technology with thin film resistors, metal-insulator-metal (MIM) capacitors and spiral inductors. Its large signal bandwidth is over 12 GHz. The eye diagrams were measured at bit rate up to 12Gb/s with an output voltage swing of 3.4 Vp-p at single end of output. With measured characteristics we estimate that the driver IC can operate at bit rate of higher than 24Gb/s. The power consumption is less than 1.8 W using a single supply voltage of -4.5 V.

Keywords

MIM devices; driver circuits; gallium compounds; high electron mobility transistors; high-speed integrated circuits; inductors; thin film resistors; -4.5 V; 0.2 microns; 1.8 W; 24 Gbit/s; 3.4 V; AlGaAs-InGaAs-GaAs; PHEMT technology; eye diagrams; high-speed optical fiber communication systems; integrated circuit; integrated laser driver; integrated modulator driver; laser driver IC; metal-insulator-metal capacitors; modulator driver IC; pseudomorphic high electron mobility transistors; spiral inductors; thin film resistors; Bit rate; Driver circuits; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Optical fiber communication; PHEMTs; Thin film inductors; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7995-0

Type

conf

DOI

10.1109/ESSCIRC.2003.1257126

Filename

1257126