Title :
10 Gb/s single-ended laser driver in 0.35/spl mu/m SiGe BiCMOS technology
Author :
Tsai, Chia-Ming ; Huang, Li-Ren ; Li, Day-Vei ; Chang, Chien-Fu
Author_Institution :
SoC Technol. Center, Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
This paper presents a high-efficiency 10 Gb/s single-ended laser driver using a novel operating point control scheme. The cascade output configuration is used to reduce Miller capacitance and extend driving capability. To reduce the speed degradation caused by the ground inductance, a special but simple technique is employed while integrating the whole driver design. The laser driver is capable of driving 100mA modulation current with total power consumption, excluding the modulation current, of less than 140mW at 3.3V.
Keywords :
BiCMOS integrated circuits; driver circuits; semiconductor lasers; silicon compounds; 0.35 microns; 10 Gbit/s; 100 mA; 140 mW; 3.3 V; BiCMOS technology; Miller capacitance reduction; SiGe; cascade output configuration; extended driving capability; ground inductance; laser driver design; operating point control scheme; single-ended laser driver; speed degradation reduction; BiCMOS integrated circuits; Capacitance; Degradation; Energy consumption; Germanium silicon alloys; Inductance; Optical control; Power lasers; Quantum cascade lasers; Silicon germanium;
Conference_Titel :
Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7995-0
DOI :
10.1109/ESSCIRC.2003.1257129
