DocumentCode :
2447258
Title :
Circuit techniques for gate and sub-threshold leakage minimization in future CMOS technologies
Author :
Rao, Rahul M. ; Burns, Jeffrey L. ; Brown, Richard B.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fYear :
2003
fDate :
16-18 Sept. 2003
Firstpage :
313
Lastpage :
316
Abstract :
Leakage current is becoming an increasingly important fraction of the total power dissipation of integrated circuits. This work focuses on leakage power minimization in light of the growing significance of gate leakage current. The need to consider gate leakage while determining the sleep-state pattern is demonstrated. Circuit reorganization and sleep-state assignment techniques are presented for gate and total leakage minimization of static and dynamic circuits. We also re-evaluate the MTCMOS circuit scheme for total leakage minimization.
Keywords :
CMOS integrated circuits; integrated circuit technology; leakage currents; minimisation; CMOS technologies; MTCMOS circuit scheme; circuit reorganization; circuit techniques; dynamic circuits; gate leakage current; gate leakage minimization; integrated circuits; leakage power minimization; sleep-state assignment techniques; sleep-state pattern; static circuits; sub-threshold leakage minimization; total leakage minimization; total power dissipation; CMOS technology; Circuits; Gate leakage; Leakage current; MOS devices; Minimization; Power dissipation; Subthreshold current; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7995-0
Type :
conf
DOI :
10.1109/ESSCIRC.2003.1257135
Filename :
1257135
Link To Document :
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