Title :
Calculation of amorphous silicon solar cell parameters with different doping levels
Author :
Sinha, S.P. ; Dubey, G.C.
Author_Institution :
Dept. of Phys., Kohima Sci. Coll., Nagaland, India
Abstract :
Amorphous silicon solar cell efficiency has stagnated at 13.6% since the last decade. Extensive experimental and theoretical works have been done to improve this efficiency by increasing short circuit current, open circuit voltage and fill factor. In the present paper, an attempt has been made to calculate these parameters with different doping levels and to optimise them to get the best results. This has been done by choosing a proper value of barrier potentials at the p-i and i-n junctions. It has been noticed that doping levels affect the parameters. The present analysis has resulted in an increased value of cell parameters which will help in improving the cell efficiency
Keywords :
amorphous semiconductors; elemental semiconductors; p-n junctions; semiconductor device models; semiconductor doping; silicon; solar cells; 13.6 percent; Si; amorphous silicon solar cell parameters calculation; barrier potentials; doping levels; fill factor; i-n junction; open circuit voltage; p-i junction; short circuit current; Amorphous silicon; Circuits; Conducting materials; Conductive films; Doping; Photonic band gap; Photovoltaic cells; Physics; Semiconductor films; Semiconductor materials;
Conference_Titel :
Energy Conversion Engineering Conference and Exhibit, 2000. (IECEC) 35th Intersociety
Conference_Location :
Las Vegas, NV
Print_ISBN :
1-56347-375-5
DOI :
10.1109/IECEC.2000.870932
