DocumentCode :
2447385
Title :
Cathodoluminescent in heavily-doped ZnSe
Author :
Chiu, Dirk M.
Author_Institution :
Moon Lab., Doncaster East, Vic., Australia
Volume :
2
fYear :
2000
fDate :
2000
Firstpage :
1222
Abstract :
The present cathodoluminescent investigation of ZnSe single crystals used samples grown by closed-tube thermal diffusion technique. The crystals used had gone through three different stages of treatments. The as-grown ZnSe was doped with 8×1018 cm-3 iodine concentration during growth, and the as-grown sample received zinc extraction treatment, and that subsequently diffused with Zn-In impurity of 7×1018 cm-3 indium concentration. The yellow-orange light with a broad band peaking at 2.01 eV was observed in all the samples, and was contributed as the self-activated luminescent center due to the deep donor state formed from the host crystal cation surrounding the activator, while the activator perturbs the cation to form this state. A configuration coordinate model, together with a quantum-mechanical vibration model analysis indicated and confirmed the temperature shift of the luminescent peak and the temperature dependency of the half-width of the main band
Keywords :
II-VI semiconductors; cathodoluminescence; phosphors; semiconductor doping; semiconductor growth; thermal diffusion; zinc compounds; 2.01 eV; ZnSe; cathodoluminescent investigation; closed-tube thermal diffusion growth; configuration coordinate model; deep donor state; heavily-doped ZnSe; host crystal cation; luminescent peak; quantum-mechanical vibration model analysis; self-activated luminescent center; temperature shift; yellow-orange light; zinc extraction treatment; Crystals; Electron traps; Energy states; Gold; Lattices; Luminescence; Phosphors; Spontaneous emission; Temperature dependence; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Energy Conversion Engineering Conference and Exhibit, 2000. (IECEC) 35th Intersociety
Conference_Location :
Las Vegas, NV
Print_ISBN :
1-56347-375-5
Type :
conf
DOI :
10.1109/IECEC.2000.870934
Filename :
870934
Link To Document :
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