Title :
A low-noise 1.8Gbps bipolar OEIC
Author :
Swoboda, Robert ; Zimmermann, Horst
Author_Institution :
Inst. for Electr. Meas. & Circuit Design, Vienna Univ. of Technol., Austria
Abstract :
A silicon monolithically integrated optical receiver with a maximum possible data rate of 1.8Gbps at dual supply of 5V and 17V with a sensitivity of -21.9dBm for a wavelength of 670nm and a BER=10/sup -9/ is presented. With a single supply of 5V a data rate of 1.6Gbps is reached at a sensitivity of -23.7dBm with a BER=10/sup -9/. At a data rate of 1.5Gbps the best reported sensitivity of -24.4dBm with a BER of 10/sup -9/ is achieved. The OEIC consists of a pin-photodiode and bipolar amplifier in a 0.6/spl mu/m BiCMOS technology.
Keywords :
BiCMOS integrated circuits; amplifiers; bipolar integrated circuits; integrated optoelectronics; optical receivers; p-i-n photodiodes; sensitivity; 0.6 microns; 1.8 Gbit/s; 17 V; 5 V; 670 nm; BiCMOS technology; Si; bipolar amplifier; low-noise bipolar OEIC; monolithically integrated optical receiver; pin-photodiode; CMOS technology; Integrated circuit technology; Optical interconnections; Optical receivers; Optical sensors; Optoelectronic devices; PIN photodiodes; Silicon; Space technology; Stimulated emission;
Conference_Titel :
Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7995-0
DOI :
10.1109/ESSCIRC.2003.1257142
