Title :
RF characteristics of p-well GaAs MESFETs
Author :
Canfield, P.C. ; Allstot, D.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
Abstract :
The first experimental results on the RF performance of p-well MESFETs are presented. It is shown that the small-signal equivalent circuit for the p-well MESFET must include a series RC branch between the source and drain to properly model the undepleted well and its contact. The dependence of the equivalent circuit parameter values on the doping of the p-well is presented and shown to have only a minor effect on the RF performance.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; semiconductor device models; solid-state microwave devices; GaAs; RF characteristics; circuit parameter values; microwave transistors; p-well MESFET; p-well doping; series RC branch; small-signal equivalent circuit; Capacitance; Doping; Equivalent circuits; Gallium arsenide; Implants; Joining processes; MESFETs; Radio frequency; Scattering parameters; Semiconductor process modeling;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99766
