DocumentCode
2447944
Title
A method for predicting IGBT junction temperature under transient condition
Author
Ahmed, M.M.R. ; Putrus, G.A.
Author_Institution
Warwick Univ., Coventry
fYear
2008
fDate
10-13 Nov. 2008
Firstpage
454
Lastpage
459
Abstract
In this paper, a method to predict junction temperature of the solid-state switch under transient condition is presented. The method is based on the thermal model of the switch and instantaneous measurement of the energy loss in the device. The method for deriving thermal model parameters from the manufacturers data sheet is derived and verified. A simulation work has been carried out on a single IGBT under different conditions using MATLAB/SIMULINK. The results show that the proposed method is effective to predict the junction temperature of the solid-state device during transient conditions and is applicable to other devices such as diodes and thyristors.
Keywords
insulated gate bipolar transistors; power semiconductor switches; IGBT junction temperature; solid-state device; solid-state switch; transient condition; Energy loss; Energy measurement; Insulated gate bipolar transistors; Loss measurement; MATLAB; Mathematical model; Solid state circuits; Switches; Temperature; Virtual manufacturing;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics, 2008. IECON 2008. 34th Annual Conference of IEEE
Conference_Location
Orlando, FL
ISSN
1553-572X
Print_ISBN
978-1-4244-1767-4
Electronic_ISBN
1553-572X
Type
conf
DOI
10.1109/IECON.2008.4757996
Filename
4757996
Link To Document