Title :
A method for predicting IGBT junction temperature under transient condition
Author :
Ahmed, M.M.R. ; Putrus, G.A.
Author_Institution :
Warwick Univ., Coventry
Abstract :
In this paper, a method to predict junction temperature of the solid-state switch under transient condition is presented. The method is based on the thermal model of the switch and instantaneous measurement of the energy loss in the device. The method for deriving thermal model parameters from the manufacturers data sheet is derived and verified. A simulation work has been carried out on a single IGBT under different conditions using MATLAB/SIMULINK. The results show that the proposed method is effective to predict the junction temperature of the solid-state device during transient conditions and is applicable to other devices such as diodes and thyristors.
Keywords :
insulated gate bipolar transistors; power semiconductor switches; IGBT junction temperature; solid-state device; solid-state switch; transient condition; Energy loss; Energy measurement; Insulated gate bipolar transistors; Loss measurement; MATLAB; Mathematical model; Solid state circuits; Switches; Temperature; Virtual manufacturing;
Conference_Titel :
Industrial Electronics, 2008. IECON 2008. 34th Annual Conference of IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1767-4
Electronic_ISBN :
1553-572X
DOI :
10.1109/IECON.2008.4757996
