Title :
Pulse-doped GaAs MESFETs with planar self-aligned gate for MMIC
Author :
Nakajima, Shigeru ; Otobe, Kenji ; Kuwata, Nobuhiro ; Shiga, Nobuo ; Matsuzaki, Ken-Ichiro ; Hayashi, Hideki
Author_Institution :
Sumitomo Electr. Ind. Ltd., Yokohama, Japan
Abstract :
A pulse-doped GaAs MESFET with an n/sup +/ self-aligned planar gate has been developed. This device shows excellent drain current linearity and minimum noise figures of 0.72 dB (1.15 dB) with associated gains of 10.5 dB (8.5 dB) at 12 GHz (18 GHz). Furthermore, excellent uniformity and reproducible device characteristics have been realized.<>
Keywords :
MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; semiconductor doping; solid-state microwave devices; 0.72 dB; 1.15 dB; 10.5 dB; 12 GHz; 18 GHz; 8.5 dB; GaAs; III-V semiconductor; MESFET; MMIC; SHF; monolithic microwave IC; n/sup +/ planar gate; planar self-aligned gate; pulse-doped device; Annealing; Gallium arsenide; HEMTs; Integrated circuit noise; MESFETs; MMICs; MODFETs; Microwave devices; Reproducibility of results; Semiconductor device noise;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99767
