Title :
On-chip integration of dipole antenna and VCO using standard BiCMOS technology for 10 GHz applications
Author :
Touati, Fayçal ; Pons, Michel
Author_Institution :
France Telecom R&D, Meylan, France
Abstract :
The study of on-chip integration of a 10 GHz dipole antenna with a VCO using standard BiCMOS7 (0.25/spl mu/m) STm technology has been carried out. The antenna configuration, which has been chosen, is a folded dipole, which allows reducing the chip dimension to 2.7 /spl times/ 4.48 mm/sup 2/. The first measurement results are in rather good agreement with the simulated results. For a RF power injected from VCO to the antenna of -7dBm (90.2mW), the EIRP of antenna is about -15dBm. Thus the estimated value of antenna isotropic gain is about -8dBi. This result is consistent with simulation values of radiation efficiency of the order of 10%.
Keywords :
BiCMOS integrated circuits; dipole antennas; integrated circuit design; voltage-controlled oscillators; 0.2 mW; 0.25 micron; 10 GHz; BiCMOS technology; EIRP; RF power injected; STm technology; VCO; antenna configuration; antenna isotropic gain; dipole antenna; on-chip integration; radiation efficiency; voltage controlled oscillator; BiCMOS integrated circuits; Chemical technology; Conductivity; Dipole antennas; Radio frequency; Silicon; Substrates; Switches; Telecommunication standards; Voltage-controlled oscillators;
Conference_Titel :
Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7995-0
DOI :
10.1109/ESSCIRC.2003.1257180
