DocumentCode
2448228
Title
Highly reflective AlN-GaN and ZrO2-SiO2 multilayer reflectors and their applications for InGaN-GaN surface emitting laser structures
Author
Sakaguchi, T. ; Shirasawa, T. ; Mochida, N. ; Inoue, A. ; Iwata, M. ; Honda, T. ; Koyama, F. ; Iga, K.
Author_Institution
P&I Lab., Tokyo Inst. of Technol., Japan
Volume
1
fYear
1998
fDate
1-4 Dec 1998
Firstpage
34
Abstract
We present the design and fabrication of multilayer distributed Bragg reflectors (DBRs) for GaN based VCSELs covering from ultra-violet to blue spectral region. Also, a resonant emission from a photopumped InGaN-GaN vertical cavity structure with a cavity length of 1.9 μm is demonstrated
Keywords
distributed Bragg reflector lasers; laser transitions; optical design techniques; optical fabrication; optical multilayers; optical pumping; surface emitting lasers; 1.9 mum; AlN-GaN; GaN based VCSELs; InGaN-GaN; InGaN-GaN surface emitting laser structures; ZiO2-SiO2 multilayer reflectors; ZrO2-SiO2; cavity length; highly reflective; multilayer distributed Bragg reflectors; optical design; optical fabrication; photopumped InGaN-GaN vertical cavity structure; resonant emission; Distributed Bragg reflectors; Gallium nitride; Laser excitation; Laser modes; Nonhomogeneous media; Optical pulses; Pulsed laser deposition; Quantum well devices; Reflectivity; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4947-4
Type
conf
DOI
10.1109/LEOS.1998.737719
Filename
737719
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