DocumentCode :
2448265
Title :
A 2.4GHz SiGe low phase-noise VCO using on chip tapped inductor
Author :
Lai, Ping Wing ; Dobos, Laszlo ; Long, Stephen
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear :
2003
fDate :
16-18 Sept. 2003
Firstpage :
505
Lastpage :
508
Abstract :
An on-chip tapped inductor technique is shown to be an efficient method for reducing oscillator phase noise. Higher signal amplitude can be achieved while avoiding breakdown and without penalty in area or tuning range. A commercial SiGe BJT process was used to fabricate the 2.4GHz VCO. The measured phase noise at 1MHz offset frequency is -128 dBc/Hz with 23% tuning range. The VCO dissipates 16.5mA at a 2.5V supply voltage.
Keywords :
CMOS integrated circuits; inductors; integrated circuit design; integrated circuit noise; phase noise; silicon compounds; voltage-controlled oscillators; 2.4 GHz; 2.5 V; 6.5 mA; BJT process; SiGe; VCO; on chip tapped inductor; phase noise; signal amplitude; tuning range; Electric breakdown; Frequency measurement; Germanium silicon alloys; Inductors; Noise measurement; Phase measurement; Phase noise; Silicon germanium; Tuning; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7995-0
Type :
conf
DOI :
10.1109/ESSCIRC.2003.1257183
Filename :
1257183
Link To Document :
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