Title :
Bond pad and ESD protection structure for 0.25/spl mu/m/0.18/spl mu/m RF-CMOS
Author :
Leenaerts, Domine ; Velghe, Rudolf
Author_Institution :
Philips Res., Eindhoven, Netherlands
Abstract :
In CMOS, standard ESD protections are hindered by parasitic capacitance, area requirements and quality factor. This paper presents dedicated diode network ESD structures together with special bond pad configurations with a satisfactory performance. The amount of used diode area sets the ESD performance and in all cases an excellent RF performance is obtained. We show measurement results for 0.25/spl mu/m and 0.18/spl mu/m CMOS technology.
Keywords :
CMOS integrated circuits; MOSFET; electric potential; electrostatic discharge; integrated circuit design; 0.18 micron; 0.25 micron; ESD protection structure; RF-CMOS; area requirements; bond pad configurations; dedicated diode network ESD structures; parasitic capacitance; quality factor; Atherosclerosis; Bonding; CMOS technology; Circuits; Diodes; Electrostatic discharge; Parasitic capacitance; Protection; Q factor; Radio frequency;
Conference_Titel :
Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7995-0
DOI :
10.1109/ESSCIRC.2003.1257199
