A wide range temperature stable integrated current reference

Author

Radecker, Matthias ; Knoll, Alois ; Kocaman, Robert ; Buguszewicz, Viktor ; Rudolf, Ralf

Author_Institution

Fraunhofer-Inst. fur Autonome Intelligente Syst., Sankt Augustin, Germany

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

583

Lastpage

586

Abstract

A current reference integrated circuit was built in a 2 micron CMOS process base on SIMOX technology, without the need of external trimming, to provide 19.5/spl mu/A. the overall error was less than +/-1% (< 67 ppm/k) over 240 K temperature range from -40 to 200 /spl deg/C (Vdd<5V, Vcc>10V), at a power consumption of less than 1.5 mW. From -15 to 90/spl deg/C the TC was < 12 ppm/K, derived by higher order temperature compensation. The temperature dependence of the diode parameters is cancelled out against the temperature coefficient of the resistors. The error of the absolute current value was +/-5% (30 circuits from two different wafers). The circuit of 0.3 mm/sup 2/ contains p-channel and n-channel MOS transistors, pin-diodes, and p+ resistors. It is applicable for oscillator and filter frequency stability, and for precise time delay circuits, especially in smart power and high temperature applications.

Keywords

CMOS integrated circuits; SIMOX; circuit simulation; diodes; integrated circuit design; power consumption; reference circuits; CMOS transistor mismatch model; NMOS transistors; PMOS transistors; Weak inversion; mismatch characterization; strong inversion; CMOS integrated circuits; CMOS process; CMOS technology; Diodes; Energy consumption; Integrated circuit technology; MOSFETs; Resistors; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7995-0

Type

conf

DOI

10.1109/ESSCIRC.2003.1257202

Filename

1257202