Resonant-cavity InGaAs-InAlAs separate absorption, charge and multiplication avalanche photodiodes

Author

Nie, H. ; Lenox, C. ; Kinsey, G. ; Yuan, P. ; Holmes, A.L., Jr. ; Streetman, B.G. ; Campbell, J.C.

Author_Institution

Texas Univ., Austin, TX, USA

Volume

1

fYear

1998

fDate

1-4 Dec 1998

Firstpage

81

Abstract

Summary form only given. High-speed avalanche photodiodes (APDs) are often used in optical communication systems due to their increased sensitivity as compared to conventional p-i-n photodetectors. The crucial performance parameters for this application are low multiplication noise and high gain-bandwidth. Recently, we have demonstrated low multiplication noise and record gain-bandwidth product (290 GHz) using an AlGaAs-GaAs-InGaAs resonant-cavity APD with separate absorption, charge and multiplication (SACM) regions. Those devices operated in the wavelength range near 0.9 μm. In this paper, we have extended this work to 1.55 μm using InAlAs-lnGaAs materials system

Keywords

III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; high-speed optical techniques; indium compounds; optical communication equipment; optical noise; 1.55 mum; AlGaAs-GaAs-InGaAs; AlGaAs-GaAs-InGaAs resonant-cavity APD; InAlAs-lnGaAs; InGaAs-InAlAs; high gain-bandwidth; high-speed avalanche photodiodes; low multiplication noise; optical communication systems; p-i-n photodetectors; record gain-bandwidth product; resonant-cavity InGaAs-InAlAs separate absorption charge and multiplication avalanche photodiodes; sensitivity; separate absorption charge and multiplication regions; Absorption; Avalanche photodiodes; Bandwidth; Indium compounds; Indium gallium arsenide; Indium phosphide; Mirrors; Noise measurement; Optical noise; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.737743

Filename

737743