Title :
Monolithic SOI-MEMS capacitive pressure sensor with standard bulk CMOS readout circuit
Author :
Ylimaula, Miikka ; Åberg, Markku ; Kiihamäki, Jyrki ; Ronkainen, Hannu
Author_Institution :
Microelectron., VTT Inf. Technol., Finland
Abstract :
We report an integrated monolithic micromechanical capacitive pressure sensor circuit based on novel method for fabricating pressure detecting vacuum cavities into buried oxide of SOI-wafer. The method allows fabricating the readout circuit with standard bulk CMOS process. The readout circuit of the pressure sensor is a low-power CMOS relaxation oscillator.
Keywords :
CMOS integrated circuits; capacitive sensors; micromechanical devices; monolithic integrated circuits; pressure sensors; relaxation oscillators; silicon-on-insulator; SOI-wafer; buried oxide; capacitive pressure sensor circuit; low-power CMOS relaxation oscillator; monolithic SOI-MEMS; monolithic micromechanical pressure sensor circuit; standard bulk CMOS process; standard bulk CMOS readout circuit; vacuum cavities; CMOS process; Capacitive sensors; Circuits; Conductivity; Etching; Microelectromechanical devices; Micromechanical devices; Silicon on insulator technology; Substrates; Wafer bonding;
Conference_Titel :
Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7995-0
DOI :
10.1109/ESSCIRC.2003.1257209
