CMOS transistor mismatch model valid from weak to strong inversion

Author

Serrano-Gotarredona, Teresa ; Linares-Barranco, Bernabé

Author_Institution

Inst. de Microelectron. de Sevilla, Spain

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

627

Lastpage

630

Abstract

A five parameter mismatch model continuous from weak to strong inversion is presented. The model is an extension of a previously reported one valid in the strong inversion region [1]. A mismatch characterization of NMOS and PMOS transistors for 30 different geometries has been done with this continuous model. The model is able to predict current mismatch with a mean relative error of 13.5% in the weak inversion region and 5% in strong inversion. This is verified for 12 different curves, sweeping V/sub G/, V/sub DS/,V/sub S/.

Keywords

CMOS analogue integrated circuits; MOSFET; integrated circuit design; transistors; CMOS transistor mismatch model; NMOS transistors; PMOS transistors; mismatch characterization; strong inversion; weak inversion; Artificial intelligence; CMOS technology; Data mining; Equations; Geometry; Intrusion detection; MOSFETs; Semiconductor device modeling; Thermal factors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7995-0

Type

conf

DOI

10.1109/ESSCIRC.2003.1257213

Filename

1257213

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2448957