Title :
CMOS transistor mismatch model valid from weak to strong inversion
Author :
Serrano-Gotarredona, Teresa ; Linares-Barranco, Bernabé
Author_Institution :
Inst. de Microelectron. de Sevilla, Spain
Abstract :
A five parameter mismatch model continuous from weak to strong inversion is presented. The model is an extension of a previously reported one valid in the strong inversion region [1]. A mismatch characterization of NMOS and PMOS transistors for 30 different geometries has been done with this continuous model. The model is able to predict current mismatch with a mean relative error of 13.5% in the weak inversion region and 5% in strong inversion. This is verified for 12 different curves, sweeping V/sub G/, V/sub DS/,V/sub S/.
Keywords :
CMOS analogue integrated circuits; MOSFET; integrated circuit design; transistors; CMOS transistor mismatch model; NMOS transistors; PMOS transistors; mismatch characterization; strong inversion; weak inversion; Artificial intelligence; CMOS technology; Data mining; Equations; Geometry; Intrusion detection; MOSFETs; Semiconductor device modeling; Thermal factors; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7995-0
DOI :
10.1109/ESSCIRC.2003.1257213
