DocumentCode
2449203
Title
Amorphous silicon TFT active-matrix OLED pixel
Author
Lu, M.H. ; Ma, E. ; Sturm, J.C. ; Wagner, S.
Author_Institution
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Volume
1
fYear
1998
fDate
1-4 Dec 1998
Firstpage
130
Abstract
We report the fabrication of a video-brightness, active-matrix organic LED (AMOLED), two-transistor-pixel based on amorphous silicon (a-Si) TFT technology, with a maximum process temperature of 350 C. The process should be compatible with existing a-Si TFT manufacturing technology for AMLCDs
Keywords
LED displays; amorphous semiconductors; brightness; integrated circuit technology; semiconductor technology; silicon; thin film transistors; 350 C; AMLCDs; Si; a-Si TFT manufacturing technology; active-matrix organic LED fabrication; amorphous Si TFT active-matrix OLED pixel; amorphous silicon; maximum process temperature; two-transistor-pixel; video-brightness; Active matrix liquid crystal displays; Active matrix organic light emitting diodes; Active matrix technology; Amorphous silicon; Fabrication; Light emitting diodes; Manufacturing processes; Organic light emitting diodes; Temperature; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4947-4
Type
conf
DOI
10.1109/LEOS.1998.737767
Filename
737767
Link To Document