Title :
Amorphous silicon TFT active-matrix OLED pixel
Author :
Lu, M.H. ; Ma, E. ; Sturm, J.C. ; Wagner, S.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
We report the fabrication of a video-brightness, active-matrix organic LED (AMOLED), two-transistor-pixel based on amorphous silicon (a-Si) TFT technology, with a maximum process temperature of 350 C. The process should be compatible with existing a-Si TFT manufacturing technology for AMLCDs
Keywords :
LED displays; amorphous semiconductors; brightness; integrated circuit technology; semiconductor technology; silicon; thin film transistors; 350 C; AMLCDs; Si; a-Si TFT manufacturing technology; active-matrix organic LED fabrication; amorphous Si TFT active-matrix OLED pixel; amorphous silicon; maximum process temperature; two-transistor-pixel; video-brightness; Active matrix liquid crystal displays; Active matrix organic light emitting diodes; Active matrix technology; Amorphous silicon; Fabrication; Light emitting diodes; Manufacturing processes; Organic light emitting diodes; Temperature; Thin film transistors;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.737767
