Title :
A 1V 10-mW monolithic Bluetooth receiver in a 0.35/spl mu/m CMOS process
Author :
Cheung, Vincent S L ; Luong, Howard C.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
A CMOS Bluetooth receiver is implemented using a single conversion low-IF architecture. A low IF of 600 kHz is employed to minimize the power dissipation in the quadrature IF circuitry, which employs switched-opamp technique to guarantee for 1V operation. Realized in a 0.35/spl mu/m CMOS process ( V/sub TN/ = 0.6 V, V/sub TP/= -0.77 V) and a single 1V supply, the proposed Bluetooth receiver achieves a measured IIP3 of -18dBm, an image rejection of 28 dB, a noise figure of 29 dB and a sensitivity of -70 dBm while consuming a low power dissipation of 10mW.
Keywords :
Bluetooth; CMOS integrated circuits; integrated circuit design; low-power electronics; monolithic integrated circuits; radio receivers; -0.77 V; 0.35 micron; 0.6 V; 1 V; 10 mW; 29 dB; 600 kHz; CMOS process; image rejection; monolithic Bluetooth receiver; power dissipation; quadrature IF circuitry; single conversion low-IF architecture; switched-opamp technique; Bluetooth; CMOS process; Circuit noise; Communication standards; Energy consumption; Filters; Image converters; Noise figure; Power dissipation; Switching circuits;
Conference_Titel :
Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7995-0
DOI :
10.1109/ESSCIRC.2003.1257228
