A 1V 10-mW monolithic Bluetooth receiver in a 0.35/spl mu/m CMOS process

Author

Cheung, Vincent S L ; Luong, Howard C.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

687

Lastpage

690

Abstract

A CMOS Bluetooth receiver is implemented using a single conversion low-IF architecture. A low IF of 600 kHz is employed to minimize the power dissipation in the quadrature IF circuitry, which employs switched-opamp technique to guarantee for 1V operation. Realized in a 0.35/spl mu/m CMOS process ( V/sub TN/ = 0.6 V, V/sub TP/= -0.77 V) and a single 1V supply, the proposed Bluetooth receiver achieves a measured IIP3 of -18dBm, an image rejection of 28 dB, a noise figure of 29 dB and a sensitivity of -70 dBm while consuming a low power dissipation of 10mW.

Keywords

Bluetooth; CMOS integrated circuits; integrated circuit design; low-power electronics; monolithic integrated circuits; radio receivers; -0.77 V; 0.35 micron; 0.6 V; 1 V; 10 mW; 29 dB; 600 kHz; CMOS process; image rejection; monolithic Bluetooth receiver; power dissipation; quadrature IF circuitry; single conversion low-IF architecture; switched-opamp technique; Bluetooth; CMOS process; Circuit noise; Communication standards; Energy consumption; Filters; Image converters; Noise figure; Power dissipation; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7995-0

Type

conf

DOI

10.1109/ESSCIRC.2003.1257228

Filename

1257228