Title :
A novel 1.54 μm n-i-n photodetector based on low-temperature grown GaAs
Author :
Chiu, Yi-Jen ; Kaman, Volkan ; Zhang, Sheng Z. ; Bowers, John E. ; Mishra, Umesh K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
AlGaAs based material is a well developed material in both growth and processing. We used n-i-n material structure to increase the detector responsivity by one order magnitude (0.12 A/W) without sacrificing device bandwidth. We have demonstrated a novel long wavelength n-i-n photodetector with 17 GHz bandwidth response and considerably high 0.12 A/W of responsibility (internal quantum efficiency ~40%)
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; photodetectors; 1.54 μm n-i-n photodetector; 1.54 mum; 17 GHz; 40 percent; AlGaAs; AlGaAs based material; GHz bandwidth response; GaAs; detector responsivity; internal quantum efficiency; long wavelength n-i-n photodetector; low-temperature grown GaAs; n-i-n material structure; responsibility; Bandwidth; Detectors; Gallium arsenide; High speed optical techniques; Optical coupling; Optical waveguides; PIN photodiodes; Photoconductivity; Photodetectors; Voltage;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.737778
