Title :
Semi-insulating InP grown with a CCl4 doping source
Author :
Stillman, G.E. ; Gardner, N.F. ; Hartmann, Q.J. ; Stockman, S.A. ; Baker, J.E.
Author_Institution :
Center for Compound Semicond. Microelectron., Illinois Univ., Urbana, IL, USA
fDate :
29 Apr-3 May 1996
Abstract :
Recently we have demonstrated the growth of epitaxial layers of highly resistive InP (ρ⩾109 Ω cm) by low-pressure MOCVD at low substrate temperature (<550°C) using a CCl4 doping source. The effect of substrate temperature and CCl4 flow rate on the electrical properties of this material have been studied, and the results indicate that the SI behavior is most likely due to CCl4-mediated enhancement of native defect incorporation during growth. Device results show that SI InP grown with a CCl4 doping source is suitable for application as a Schottky-barrier-enhancement layer on n-In0.53Ga0.47 As
Keywords :
III-V semiconductors; indium compounds; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; vapour phase epitaxial growth; 550 C; CCl4 doping source; InP; Schottky-barrier-enhancement layer; electrical properties; epitaxial layers; low-pressure MOCVD; native defect incorporation; semi-insulating InP; Conducting materials; Conductivity; Doping; Epitaxial layers; Indium phosphide; Insulation; MOCVD; Semiconductor materials; Substrates; Temperature;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570863
