DocumentCode :
2449834
Title :
HEMT and HBT small-signal model optimization using a genetic algorithm
Author :
Menozzi, R. ; Piazzi, A.
Author_Institution :
Dipt. di Ingegneria dell´´Inf., Parma Univ., Italy
fYear :
1997
fDate :
24-25 Nov 1997
Firstpage :
13
Lastpage :
18
Abstract :
This paper describes the application of a genetic algorithm to the wideband optimization of the small-signal models of HEMTs and HBTs. The use of a genetic algorithm allows us to overcome some of the difficulties that traditional, gradient-based optimizers encounter in the optimization of complex models such as those used for microwave and millimeter-wave devices. In particular, the need for carefully choosing an initial solution as a starting point for the gradient search disappears altogether. The algorithm was applied to AlGaAs/InGaAs/GaAs PHEMTs, InAlAs/InGaAs/InP HEMTs, GaInP/GaAs and AlGaAs/GaAs HBTs. The paper also deals with the effect of a number of parameters on the computation time and model accuracy, and gives some general guidelines as to how to tailor an efficient optimization algorithm
Keywords :
S-parameters; genetic algorithms; heterojunction bipolar transistors; high electron mobility transistors; microwave bipolar transistors; microwave field effect transistors; millimetre wave bipolar transistors; millimetre wave field effect transistors; semiconductor device models; AlGaAs-GaAs; AlGaAs-InGaAs-GaAs; AlGaAs/GaAs HBTs; AlGaAs/InGaAs/GaAs PHEMTs; GaAs; GaInP-GaAs; GaInP/GaAs HBTs; InAlAs-InGaAs-InP; InAlAs/InGaAs/InP HEMTs; InP; S-parameters; computation time; genetic algorithm; microwave devices; millimeter-wave devices; model accuracy; small-signal model optimization; wideband optimization; Gallium arsenide; Genetic algorithms; HEMTs; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Microwave devices; Millimeter wave devices; PHEMTs; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-4135-X
Type :
conf
DOI :
10.1109/EDMO.1997.668209
Filename :
668209
Link To Document :
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