Comparison of Monte Carlo, energy transport, and drift-diffusion simulations for a Si/SiGe/Si HBT

Author

Nuernbergk, D.M. ; Forster, H. ; Schwierz, F. ; Yuan, Jianni S. ; Paasch, Gernot

Author_Institution

Tech. Univ. Ilmenau, Germany

fYear

1997

fDate

24-25 Nov 1997

Firstpage

19

Lastpage

24

Abstract

The aim of this work is to compare device simulation results for a Si/SiGe/Si-hetero bipolar transistor (HBT) by using Monte Carlo (MC), energy transport (ETM), and drift-diffusion (DDM) models. Numerical results of velocity overshoot, potential, and carrier density are compared before and after the onset of the Kirk effect. This is to our knowledge the first time of such a comprehensive comparison of the three models for Si/SiGe/Si HBTs. The influence of velocity overshoot and spurious overshoot on the DC and RF behaviour are discussed

Keywords

Ge-Si alloys; Monte Carlo methods; carrier density; elemental semiconductors; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device models; silicon; DC behaviour; ETM1 model; ETM2 model; Kirk effect; Monte Carlo simulation; RF behaviour; Si-SiGe-Si; Si/SiGe/Si HBT; carrier density; device simulation results; drift-diffusion model; energy transport model; numerical results; potential; spurious overshoot; velocity overshoot; Charge carrier processes; Distributed decision making; Electric potential; Germanium silicon alloys; Heterojunction bipolar transistors; Monte Carlo methods; Poisson equations; Radio frequency; Silicon germanium; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on

Conference_Location

London

Print_ISBN

0-7803-4135-X

Type

conf

DOI

10.1109/EDMO.1997.668211

Filename

668211